Manufacturer Part Number
SSM3J135TU,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
20V Drain-Source Voltage
±8V Gate-Source Voltage
103mΩ On-Resistance @ 1A, 4.5V
3A Continuous Drain Current @ 25°C
270pF Input Capacitance @ 10V
500mW Power Dissipation
1V Gate Threshold Voltage @ 1mA
5V to 4.5V Drive Voltage Range
6nC Gate Charge @ 4.5V
Product Advantages
Low On-Resistance for Efficient Power Switching
Low Gate Charge for Efficient Switching
Small Surface Mount Package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Vgs (Max): ±8V
Rds On (Max) @ Id, Vgs: 103mΩ @ 1A, 4.5V
Current Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting
Tape & Reel Packaging
Application Areas
Power Switching
Efficient Power Conversion Circuits
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Low On-Resistance for Efficient Power Switching
Low Gate Charge for Efficient Switching
Small Surface Mount Package for Space-Constrained Designs
RoHS3 Compliance for Environmental Responsibility
