Manufacturer Part Number
RN1104MFV,L3F
Manufacturer
Toshiba Electronic Devices and Storage Corporation (TAEC)
Introduction
Single, pre-biased NPN bipolar transistor
Product Features and Performance
Low power dissipation of 150 mW
High collector-emitter breakdown voltage of 50 V
High collector current of 100 mA
Low collector cutoff current of 500 nA
Low collector-emitter saturation voltage of 300 mV at 5 mA collector current
Stable DC current gain of 80 (min) at 10 mA collector current
Product Advantages
Compact surface-mount package
Pre-biased for easy circuit design
Suitable for low-power analog and digital circuits
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 300 mV @ 5 mA
DC Current Gain (min): 80 @ 10 mA
Base Resistor: 47 kΩ
Emitter-Base Resistor: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Suitable for lead-free soldering
Compatibility
Surface-mount package (SOT-723)
Compatible with standard bipolar transistor applications
Application Areas
Low-power analog and digital circuits
Switching and amplifier applications
General-purpose transistor applications
Product Lifecycle
Current product
Availability of replacement or upgrade parts unknown
Key Reasons to Choose This Product
Low power dissipation for energy-efficient designs
High collector-emitter breakdown voltage for robust operation
Stable DC current gain for reliable performance
Compact surface-mount package for space-constrained applications
Pre-biased configuration for simplified circuit design
RN1104F