Manufacturer Part Number
CUS10S30,H3F
Manufacturer
TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Introduction
Discrete Semiconductor Products, Diodes - Rectifiers - Single
Product Features and Performance
Schottky technology
Reverse leakage current: 500 μA @ 30 V
Forward voltage: 230 mV @ 100 mA
Junction temperature: 125°C (Max)
Capacitance: 135 pF @ 0 V, 1 MHz
Reverse voltage: 30 V
Fast recovery time: ≤ 500 ns (@ Io > 200 mA)
Average rectified current: 1 A
Product Advantages
Schottky technology for fast switching
Low forward voltage for high efficiency
Compact surface mount package
Key Technical Parameters
Technology: Schottky
Reverse leakage current: 500 μA @ 30 V
Forward voltage: 230 mV @ 100 mA
Junction temperature: 125°C (Max)
Capacitance: 135 pF @ 0 V, 1 MHz
Reverse voltage: 30 V
Recovery time: ≤ 500 ns (@ Io > 200 mA)
Average rectified current: 1 A
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount (SMD) applications
Application Areas
Power supplies
Switching circuits
Rectifiers
Freewheeling diodes
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Schottky technology for fast switching and high efficiency
Low forward voltage drop for improved power conversion
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmental responsibility
Suitable for a wide range of power supply and switching applications
CUS10S40 H3FT ICSOD323