2SK209-GR(TE85L,F) - TOSHIBA

Manufacturer Part Number

2SK209-GR(TE85L,F)

Manufacturer

toshiba-semiconductor-and-storage

Introduction

The 2SK209-GR(TE85L,F) is a N-Channel Junction Field Effect Transistor (JFET) manufactured by Toshiba Semiconductor and Storage. It is designed for use in a variety of low-power electronic circuits and applications.

Product Features and Performance

Voltage Breakdown (V(BR)GSS): 50 V

Drain Current (Idss) @ Vds = 10 V, Vgs = 0 V: 14 mA

Maximum Drain Current (Id): 14 mA

Cutoff Voltage (VGS off) @ Id = 100 nA: 1.5 V

Input Capacitance (Ciss) @ Vds = 10 V: 13 pF

Maximum Power Dissipation: 150 mW

Operating Temperature Range: -55°C to +125°C

Product Advantages

Low power consumption

High voltage operation

Compact surface mount package

Suitable for a wide range of low-power electronic applications

Key Reasons to Choose This Product

Reliable performance and long-term stability

Space-saving surface mount design

Excellent thermal management for high-temperature environments

Cost-effective solution for low-power circuit designs

Quality and Safety Features

Manufactured using Toshiba's high-quality semiconductor processes

Complies with industry safety standards

Robust construction for reliable operation

Compatibility

This JFET is compatible with various electronic circuits and systems that require a low-power, high-voltage N-Channel transistor.

Application Areas

Audio amplifiers

Sensor circuits

Instrumentation

Control systems

Low-power analog and mixed-signal circuits

Product Lifecycle

The 2SK209-GR(TE85L,F) is an active product in Toshiba's portfolio. There are no immediate plans for discontinuation, and it remains a current offering. If you have any questions or need further assistance, please contact our sales team through our website.