Manufacturer Part Number
2SA2060(TE12L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Product - Transistors - Bipolar (BJT) - Single
Product Features and Performance
Operating Temperature: 150°C (TJ)
Power Max: 1 W
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 2 A
Current Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 33mA, 1A
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 300mA, 2V
Product Advantages
RoHS3 Compliant
Surface Mount Mounting Type
Key Technical Parameters
Power Rating: 1 W
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 2 A
Collector Cutoff Current: 100 nA
Collector-Emitter Saturation Voltage: 200 mV
DC Current Gain: 200 minimum
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
The product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
RoHS3 compliant
Surface mount package
High power rating of 1 W
Wide operating voltage up to 50 V
High collector current capacity of 2 A
Low collector cutoff current of 100 nA
Low collector-emitter saturation voltage of 200 mV
Minimum DC current gain of 200