2SA2056(TE85L,F) - Toshiba Semiconductor and Storage

Manufacturer Part Number

2SA2056(TE85L,F)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

TO-236-3, SC-59, SOT-23-3 Package

Tape & Reel (TR) Package

Operating Temperature: 150°C (TJ)

Power Rating: 625 mW

Collector-Emitter Breakdown Voltage (Max): 50 V

Collector Current (Max): 2 A

Collector Cutoff Current (Max): 100 nA (ICBO)

Collector-Emitter Saturation Voltage (Max): 200 mV @ 33 mA, 1 A

Transistor Type: PNP

DC Current Gain (hFE) (Min): 200 @ 300 mA, 2 V

Product Advantages

RoHS3 Compliant

Compact Surface Mount Package

Suitable for High Current Applications

Key Technical Parameters

Power Rating: 625 mW

Collector-Emitter Breakdown Voltage (Max): 50 V

Collector Current (Max): 2 A

DC Current Gain (hFE) (Min): 200 @ 300 mA, 2 V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for Surface Mount Applications

Application Areas

General Purpose Electronics

Power Supplies

Amplifiers

Switching Circuits

Product Lifecycle

Current product, no indication of discontinuation

Key Reasons to Choose This Product

RoHS3 Compliant

Compact Surface Mount Package

High Power Rating and Current Capability

Suitable for High Current Applications

Proven Reliability and Performance