Manufacturer Part Number
2SA1943-O(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
High-power PNP bipolar junction transistor for audio amplifiers and power supplies.
Product Features and Performance
Capable of handling high power up to 150W
High voltage rating of 230V collector-emitter breakdown voltage
High collector current up to 15A
Transition frequency of 30MHz
Wide operating temperature range up to 150°C
Product Advantages
Robust and reliable performance for high-power applications
Enables compact and efficient circuit designs
Suitable for a variety of power electronics and audio applications
Key Technical Parameters
Power Rating: 150W
Collector-Emitter Breakdown Voltage: 230V
Collector Current (Max): 15A
Current Gain (hFE): 80 (min) @ 1A, 5V
Transition Frequency: 30MHz
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
TO-3PL package provides good thermal dissipation
Compatibility
This transistor is compatible with a wide range of audio amplifiers, power supplies, and other power electronics applications.
Application Areas
Audio amplifiers
Power supplies
Industrial electronics
Servo control systems
Battery chargers
Product Lifecycle
This product is currently in active production and widely available. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent power handling capability up to 150W
High voltage and current ratings for versatile applications
Robust and reliable performance over a wide temperature range
Compact and efficient design with through-hole mounting
RoHS3 compliance for environmentally-friendly use
Widely compatible with various power electronics circuits
2SA1943NTAEC Product (Toshiba Electronic Devices and Stora