Manufacturer Part Number
2SA1162-Y,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
Discrete Semiconductor Product - Bipolar Junction Transistor (BJT), PNP
Product Features and Performance
Operating temperature up to 125°C
Power rating of 150 mW
Collector-Emitter Breakdown Voltage up to 50V
Collector Current up to 150 mA
Collector Cut-off Current up to 100 μA
Low Saturation Voltage of 300 mV @ 10 mA, 100 mA
DC Current Gain of 120 @ 2 mA, 6V
Transition Frequency of 80 MHz
Product Advantages
Compact S-Mini package
Surface mount design
ROHS3 compliant
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 150 mA
Collector Cut-off Current: 100 μA
Saturation Voltage: 300 mV
DC Current Gain: 120
Transition Frequency: 80 MHz
Quality and Safety Features
ROHS3 compliant
Compatibility
Compatible with various electronic circuits and systems
Application Areas
General purpose amplification and switching in electronic devices
Product Lifecycle
Current product offering, no information on discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High performance in a compact surface mount package
Suitable for a wide range of electronic applications
ROHS3 compliance for environmental sustainability
Proven reliability and quality from a reputable manufacturer
