ES3G V6G Tech Specifications
TSC (Taiwan Semiconductor) - ES3G V6G technical specifications, attributes, parameters and parts with similar specifications to TSC (Taiwan Semiconductor) - ES3G V6G
| Product Attribute | Attribute Value | |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | |
| Voltage - DC Reverse (Vr) (Max) | 400V | |
| Supplier Device Package | DO-214AB (SMC) | |
| Speed | Fast Recovery = 200mA (Io) | |
| Series | - | |
| Reverse Recovery Time (trr) | 35ns | |
| Package / Case | DO-214AB, SMC | |
| Other Names | ES3G V6G-ND ES3GV6G |
|
| Operating Temperature - Junction | -55°C ~ 150°C |
| Product Attribute | Attribute Value | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Manufacturer Standard Lead Time | 8 Weeks | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Diode Type | Standard | |
| Detailed Description | Diode Standard 400V 3A Surface Mount DO-214AB (SMC) | |
| Current - Reverse Leakage @ Vr | 10µA @ 400V | |
| Current - Average Rectified (Io) | 3A | |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
The three parts on the right have similar specifications to TSC (Taiwan Semiconductor) ES3G V6G
| Product Attribute |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | ES3G V6G | ES3GHE3_A/H | ES3GBF | ES3DBF |
| Manufacturer | TSC (Taiwan Semiconductor) | Vishay General Semiconductor - Diodes Division | Yangjie Technology | Yangjie Technology |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | - | - | - |
| Current - Reverse Leakage @ Vr | 10µA @ 400V | 10 µA @ 400 V | - | - |
| Current - Average Rectified (Io) | 3A | 3A | - | - |
| Speed | Fast Recovery = 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - | - |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C | - | - |
| Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | - | - |
| Series | - | Automotive, AEC-Q101 | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Diode Type | Standard | - | - | - |
| Other Names | ES3G V6G-ND ES3GV6G |
- | - | - |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | - | - | - |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC | - | - |
| Manufacturer Standard Lead Time | 8 Weeks | - | - | - |
| Reverse Recovery Time (trr) | 35ns | 50 ns | - | - |
| Voltage - DC Reverse (Vr) (Max) | 400V | 400 V | - | - |
| Detailed Description | Diode Standard 400V 3A Surface Mount DO-214AB (SMC) | - | - | - |
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | - | - |
Download ES3G V6G pdf datasheets and TSC (Taiwan Semiconductor) documentation for ES3G V6G - TSC (Taiwan Semiconductor).
ES3GHE3_A/HVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A DO214AB
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ES3G R6Taiwan Semiconductor CorporationDIODE GEN PURP 400V 3A DO214AB
ES3DB-13-FDiodes IncorporatedDIODE GEN PURP 200V 3A SMBES3DHE3/9ATVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 3A DO214ABES3J R6GTaiwan Semiconductor CorporationDIODE GEN PURP 600V 3A DO214ABES3DBGSHIKUESES3F-E3/9ATVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 3A DO214ABES3G/SMCMDD
ES3G R7GTaiwan Semiconductor CorporationDIODE GEN PURP 400V 3A DO214ABES3DHE3_A/IVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 200V 3A DO214ABES3G-E3Electro-Films (EFI) / VishayES3G-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A DO214ABES3F-E3/57TVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 300V 3A DO214AB| Common Countries Logistic Time Reference | ||
|---|---|---|
| Region | Country | Logistic Time(Day) |
| America | United States | 5 |
| Brazil | 7 | |
| Europe | Germany | 5 |
| United Kingdom | 4 | |
| Italy | 5 | |
| Oceania | Australia | 6 |
| New Zealand | 5 | |
| Asia | India | 4 |
| Japan | 4 | |
| Middle East | Israel | 6 |
| DHL & FedEx Shipment Charges Reference | |
|---|---|
| Shipment charges(KG) | Reference DHL(USD$) |
| 0.00kg-1.00kg | USD$30.00 - USD$60.00 |
| 1.00kg-2.00kg | USD$40.00 - USD$80.00 |
| 2.00kg-3.00kg | USD$50.00 - USD$100.00 |
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