Manufacturer Part Number
BC817-40W
Manufacturer
Taiwan Semiconductor
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
RoHS3 Compliant
SOT-323 Package
Operating Temperature: -55°C to 150°C
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current (Max): 500 mA
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE): 250 min @ 100 mA, 1 V
Transition Frequency: 100 MHz
Surface Mount Mounting
Product Advantages
Compact SOT-323 package
Wide operating temperature range
High power and voltage ratings
Low saturation voltage
High current gain
High-frequency performance
Key Technical Parameters
Power Rating: 200 mW
Collector-Emitter Breakdown Voltage: 45 V
Collector Current (Max): 500 mA
DC Current Gain (hFE): 250 min @ 100 mA, 1 V
Transition Frequency: 100 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable semiconductor construction
Compatibility
Can be used in a wide range of electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic circuits
Power management
Radio frequency (RF) circuits
Product Lifecycle
Current production part
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Compact size
Wide operating temperature range
High power and voltage ratings
Low saturation voltage
High current gain
High-frequency performance
RoHS compliance
Proven reliability
BC817-40W E6327Cypress Semiconductor (Infineon Technologies)
BC817-40W115Nexperia
BC817-40WT1GonsemiTRANS NPN 45V 0.5A SC70-3
BC817-40LT3GonsemiTRANS NPN 45V 0.5A SOT23-3