Manufacturer Part Number
MBR2535CTL
Manufacturer
Sangdest Microelectronics / Nanjing (SMC Diode Solutions)
Introduction
High-performance Schottky barrier rectifier diode array
Product Features and Performance
Fast recovery time ≤ 500 ns
High forward current capability up to 12.5 A
Low forward voltage drop of 470 mV at 12.5 A
Low reverse leakage current of 1 mA at 35 V
High operating temperature range from -55°C to 150°C
Schottky barrier technology for efficient power conversion
Product Advantages
High power density
Improved efficiency
Reduced power loss
Compact and lightweight design
Key Technical Parameters
Voltage DC Reverse (Vr) (Max): 35 V
Current Reverse Leakage @ Vr: 1 mA @ 35 V
Voltage Forward (Vf) (Max) @ If: 470 mV @ 12.5 A
Operating Temperature Junction: -55°C ~ 150°C
Speed: Fast Recovery ≤ 500 ns, > 200 mA (Io)
Diode Configuration: 1 Pair Common Cathode
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Switch-mode power supplies
Rectifiers
Power inverters
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently available, no indication of discontinuation. Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling capability
Fast switching speed for efficient power conversion
Low forward voltage drop for minimized power losses
Wide operating temperature range for diverse applications
Compact and lightweight design for space-constrained environments
Reliable and durable construction for long-term use
RoHS3 compliance for environmental sustainability