Manufacturer Part Number
K4F6E3S4HM-MGCJ
Manufacturer
Samsung Semiconductor
Introduction
The K4F6E3S4HM-MGCJ is a high-performance 16Gbit DRAM module designed for advanced computing systems, utilizing a parallel memory interface and housed in a 200-TFBGA package.
Product Features and Performance
Volatile DRAM Memory Type
Memory Size of 16Gbit
Memory Organization: 512M x 32
Clock Frequency of 1866 MHz
Surface Mount Mounting Type
Product Advantages
High-speed memory interface suitable for demanding applications
Large storage capacity for extensive data handling
Key Technical Parameters
Memory Format: DRAM
Memory Interface: Parallel
Voltage Supply: 1.1V
Operating Temperature: -25°C ~ 85°C
Quality and Safety Features
Built to operate reliably within a wide range of temperatures from -25°C to 85°C
Compatibility
Designed for systems requiring high-speed volatile memory with a parallel interface
Application Areas
High-performance computing systems
Advanced computing applications
Product Lifecycle
Status: Active
Not nearing discontinuation, with ongoing support and availability
Several Key Reasons to Choose This Product
High memory capacity and speed improve system responsiveness and processing capabilities
Reliable performance backed by Samsung Semiconductor's reputation
Suitable for advanced and high-demand computing environments
Durable and designed for a range of operating conditions
