Manufacturer Part Number
K4A4G085WE-BCRC
Manufacturer
Samsung Semiconductor
Introduction
High-capacity, high-speed volatile DRAM component designed for various electronic devices
Product Features and Performance
4Gbit memory size
512M x 8 memory organization
Parallel memory interface for quick data transfer
Power-efficient with a supply voltage of 1.2V
Operational across a wide temperature range from 0°C to 95°C
Surface Mount 78-FBGA package for compact installation
Product Advantages
Robust data processing capabilities
Suitable for high-speed memory requirements
Low power consumption enhances device battery life
High thermal tolerance ensures reliability in diverse environments
Easy to mount design for streamlined manufacturing
Key Technical Parameters
Memory type: DRAM
Volatile memory format
Surface mounting technology
Operating temperature range of 0°C to 95°C
Quality and Safety Features
High manufacturing standards by Samsung Semiconductor
Reliable performance under various conditions
Compliance with industry safety and quality regulations
Compatibility
Compatible with devices requiring high-speed volatile memory
Support for electronic devices with a 1.2V supply voltage requisite
Application Areas
Consumer electronics
Computing devices
Telecommunications equipment
Gaming consoles
Product Lifecycle
Currently active product status
Not reported as nearing discontinuation
Availability of upgrades or replacements subject to market evolution
Several Key Reasons to Choose This Product
Cutting-edge DRAM technology from industry leader Samsung Semiconductor
Increased device performance due to large memory capacity
High data transfer rates with parallel interface
Energy-efficient operation lowers overall device power requirements
Durable design adapted for a broad range of applications and environments
K4A60DARTAEC Product (Toshiba Electronic Devices and Stora