Manufacturer Part Number
ULN2801A
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) Array
Product Features and Performance
RoHS3 Compliant
18-DIP Package
Operating Temperature: -20°C to 150°C
Power Handling: 2.25W
Voltage Ratings:
- Collector-Emitter Breakdown Voltage (Max): 50V
- Collector Current (Max): 500mA
- Collector-Emitter Saturation Voltage (Max): 1.6V
Transistor Type: 8 NPN Darlington
DC Current Gain (hFE) (Min): 1000
Product Advantages
High current handling capability
Low collector-emitter saturation voltage
Wide operating temperature range
Key Technical Parameters
Package: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of applications requiring high-current, high-voltage switching
Application Areas
Industrial control systems
Automotive electronics
Telecommunications equipment
Home appliances
Product Lifecycle
Currently in production
Replacement/upgrade options available
Key Reasons to Choose
High performance and reliability
Robust design for harsh environments
Cost-effective solution for high-current switching applications