TN2010H-6G-TR - STMicroelectronics

Manufacturer Part Number

TN2010H-6G-TR

Manufacturer

STMicroelectronics

Introduction

A sensitive gate silicon-controlled rectifier designed for use in control applications

Product Features and Performance

Sensitive gate allows triggering by very low gate current

High on-state surge current capability (Itsm: 197A, 180A)

Low off-state leakage current (5 µA)

Product Advantages

High voltage capability (600V)

Low gate trigger current requirements (Igt: 10 mA)

Suitable for surface mounting (D2PAK package)

Can handle average on-state currents up to 12.7 A

Key Technical Parameters

Off State Voltage: 600 V

Gate Trigger Voltage (Vgt): max 1.3 V

Gate Trigger Current (Igt): max 10 mA

On State Voltage (Vtm): max 1.6 V

Average On State Current (It (AV)): max 12.7 A

RMS On State Current (It (RMS)): max 20 A

Holding Current (Ih): max 40 mA

Non Repetitive Surge Current (50/60Hz): 197A, 180A

Operating Temperature Range: -40°C to 150°C

Quality and Safety Features

STMicroelectronics' commitment to high quality and reliability

Compatibility

Compatible with other devices and applications that require voltage control within its parameter range

Application Areas

Power control systems, motor control, lighting systems, and overvoltage crowbar protection

Product Lifecycle

Active; consult with the manufacturer for production longevity and support for future designs

Several Key Reasons to Choose This Product

High surge current capability suitable for applications with high peak demands

Low power gate trigger suitable for control applications

High reliability and quality from STMicroelectronics

Broad compatibility with various control systems and power applications

Ease of use in surface-mounted circuit designs due to D2PAK packaging

Operating temperature range suitable for industrial applications