STW9N80K5 - STMicroelectronics

Manufacturer Part Number

STW9N80K5

Manufacturer

STMicroelectronics

Introduction

High-performance power MOSFET featuring the MDmesh K5 technology from STMicroelectronics.

Product Features and Performance

High breakdown voltage of 800V

Low on-resistance of 900mΩ at 3.5A, 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 340pF at 100V

High continuous drain current of 7A at 25°C

Product Advantages

Excellent power handling capability

Efficient power conversion with low losses

Reliable operation in high-temperature environments

Suitable for various power conversion applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 800V

Gate-Source Voltage (Vgs) (Max): ±30V

Drain Current (Id) (Continuous): 7A at 25°C

On-Resistance (Rds(on)): 900mΩ at 3.5A, 10V

Input Capacitance (Ciss): 340pF at 100V

Power Dissipation (Tc): 110W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-247-3 package

Suitable for a wide range of power conversion applications

Application Areas

Switched-mode power supplies (SMPS)

Inverters

Motor drives

Voltage regulators

Industrial and consumer electronics

Product Lifecycle

The STW9N80K5 is an active product and is not near discontinuation.

Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

Excellent power handling and efficiency

Reliable high-temperature operation

Compact and robust TO-247-3 package

Suitable for a wide range of power conversion applications

Backed by the quality and expertise of STMicroelectronics