STW8NB100 - STMicroelectronics

Manufacturer Part Number

STW8NB100

Manufacturer

STMicroelectronics

Introduction

This is a discrete semiconductor product, specifically a single transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).

Product Features and Performance

N-channel MOSFET

1000V drain-to-source voltage

45Ω maximum on-resistance at 3.6A, 10V

3A continuous drain current at 25°C

2900pF maximum input capacitance at 25V

190W maximum power dissipation at Tc

Product Advantages

High voltage and power handling capabilities

Low on-resistance for efficient power conversion

Suitable for a variety of power electronic applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1000V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 1.45Ω @ 3.6A, 10V

Drain Current (Id): 7.3A (Tc)

Input Capacitance (Ciss): 2900pF @ 25V

Power Dissipation (Tc): 190W

Quality and Safety Features

RoHS non-compliant

TO-247-3 package for through-hole mounting

Suitable for high-temperature operation up to 150°C

Compatibility

This MOSFET is part of the PowerMESH series and is compatible with various power electronic applications.

Application Areas

Power conversion and control

Motor drives

Switching power supplies

Inverters

Industrial electronics

Product Lifecycle

The STW8NB100 is an active product, and there are no immediate plans for discontinuation. Replacement or upgraded options may become available in the future.

Key Reasons to Choose This Product

High voltage and power handling capabilities

Low on-resistance for efficient power conversion

Suitable for a variety of power electronic applications

Proven reliability and performance in the PowerMESH series

Available in a through-hole TO-247-3 package for easy integration