Manufacturer Part Number
STU7NM60N
Manufacturer
STMicroelectronics
Introduction
N-channel power MOSFET in TO-251 (IPAK) package
Product Features and Performance
600V drain-to-source voltage
900mΩ maximum on-resistance
5A continuous drain current
45W maximum power dissipation
363pF maximum input capacitance
Product Advantages
High voltage and low on-resistance for efficient power conversion
Compact TO-251 (IPAK) package for space-constrained designs
High reliability and ruggedness for industrial and automotive applications
Key Technical Parameters
600V drain-to-source voltage
900mΩ maximum on-resistance
5A continuous drain current
45W maximum power dissipation
363pF maximum input capacitance
N-channel MOSFET
4V maximum gate threshold voltage
10V maximum gate-source voltage
14nC maximum gate charge
Quality and Safety Features
RoHS3 compliant
Industrial and automotive grade quality
Compatibility
Compatible with standard TO-251 (IPAK) mounting and footprint
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and automotive electronics
Product Lifecycle
Current production with no known discontinuation plans
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
Compact and reliable TO-251 (IPAK) package
Suitable for a wide range of industrial and automotive applications
Proven quality and safety features
Compatibility with standard mounting and footprint
Ongoing availability and upgrade options from the manufacturer