Manufacturer Part Number
STU3N62K3
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
620 V Drain-to-Source Voltage
5 Ohm Maximum On-Resistance @ 1.4 A, 10 V
7 A Continuous Drain Current @ 25°C
45 W Maximum Power Dissipation
150°C Maximum Junction Temperature
Product Advantages
High Voltage Capability
Low On-Resistance
High Current Handling
Compact TO-251-3 Short Leads Package
Key Technical Parameters
Vdss: 620 V
Vgs (Max): ±30 V
Rds On (Max): 2.5 Ohm
Id (Continuous): 2.7 A
Ciss (Max): 385 pF
Qg (Max): 13 nC
Power Dissipation: 45 W
Quality and Safety Features
RoHS3 Compliant
MOSFET Technology
Compatibility
Through-Hole Mounting
Application Areas
Power Switching
Motor Control
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose
High voltage and current capability
Low on-resistance for efficient power switching
Compact and reliable TO-251-3 package
Suitable for a wide range of industrial and automotive applications