Manufacturer Part Number
STTH8R06DIRG
Manufacturer
STMicroelectronics
Introduction
High-speed silicon epitaxial rectifier diode
Suitable for high-frequency switched-mode power supplies and other power electronics applications
Product Features and Performance
Fast reverse recovery time of 45 ns
Low forward voltage drop of 2.9 V at 8 A
High reverse voltage rating of 600 V
High average rectified current of 8 A
Product Advantages
Excellent high-frequency performance
High power density
High reliability
Key Technical Parameters
Reverse Leakage Current: 30 A at 600 V
Forward Voltage: 2.9 V at 8 A
Junction Temperature: 175°C (max)
Reverse Recovery Time: 45 ns
Quality and Safety Features
RoHS3 compliant
Insulated TO-220AC package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switched-mode power supplies
Power factor correction circuits
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This is an active and widely used product, with no plans for discontinuation.
Replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Excellent high-frequency performance for efficient power conversion
High reliability and power density
Wide operating temperature range up to 175°C
RoHS3 compliance for environmentally-friendly applications
Compatibility with a broad range of power electronics designs