Manufacturer Part Number
STT4P3LLH6
Manufacturer
STMicroelectronics
Introduction
P-channel MOSFET transistor
Product Features and Performance
30V drain-to-source voltage
4A continuous drain current
56mΩ on-resistance
639pF input capacitance
6W power dissipation
5V gate threshold voltage
5V and 10V drive voltage range
Product Advantages
ROHS3 compliant
DeepGATE and STripFET H6 technology
Suitable for power management, switching, and control applications
Compact SOT-23-6 surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 56mΩ @ 2A, 10V
Continuous Drain Current (Id): 4A
Input Capacitance (Ciss): 639pF
Power Dissipation (Ptot): 1.6W
Quality and Safety Features
ROHS3 compliant
Industrial temperature range: -40°C to 150°C
Compatibility
Suitable for power management, switching, and control applications
Application Areas
Power supplies, motor drives, LED drivers, and other power management circuits
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
Efficient power management with low on-resistance
Compact surface mount package
Wide operating temperature range
Compliance with ROHS3 standards
Suitable for a variety of power management applications
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