Manufacturer Part Number
STT13005D
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Product Features and Performance
RoHS3 Compliant
Through Hole Mounting Type
TO-225AA, TO-126-3 Package / Case
150°C (TJ) Operating Temperature
45 W Power Max
400 V Voltage Collector Emitter Breakdown (Max)
2 A Current Collector (Ic) (Max)
250A Current Collector Cutoff (Max)
5V @ 400mA, 1.6A Vce Saturation (Max) @ Ib, Ic
NPN Transistor Type
10 @ 500mA, 5V DC Current Gain (hFE) (Min) @ Ic, Vce
Product Advantages
RoHS3 Compliant for environmental responsibility
Through Hole Mounting for secure installation
Wide operating temperature range up to 150°C
High power handling capacity of 45 W
High collector-emitter breakdown voltage of 400 V
High collector current capacity of 2 A
Low saturation voltage for efficient performance
NPN transistor type with stable DC current gain
Key Technical Parameters
RoHS Compliance
Mounting Type
Package / Case
Operating Temperature
Power Rating
Voltage Rating
Current Rating
Saturation Voltage
Transistor Type
DC Current Gain
Quality and Safety Features
RoHS3 Compliant for restricted substances
Reliable through-hole mounting
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Various electronic circuit designs that require high-performance NPN bipolar transistors
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose
RoHS3 compliance for environmental responsibility
Secure through-hole mounting
Wide operating temperature range
High power and voltage/current handling capabilities
Low saturation voltage for efficient performance
Stable NPN transistor characteristics
Reliable quality and safety features