Manufacturer Part Number
STSJ25NF3LL
Manufacturer
STMicroelectronics
Introduction
N-channel enhancement mode power MOSFET in 8-SOIC package
Product Features and Performance
30V Drain-Source Voltage (Vdss)
5mOhm Max On-Resistance (Rds(on)) at 12.5A, 10V
25A Continuous Drain Current (Id) at 25°C
70W Power Dissipation (Max) at Tc
1650pF Max Input Capacitance (Ciss) at 25V
33nC Max Gate Charge (Qg) at 4.5V
Product Advantages
Improved efficiency and power density
Low on-resistance for low power losses
Compact 8-SOIC package
Suitable for various power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 10.5mOhm @ 12.5A, 10V
Threshold Voltage (Vgs(th)): 1V @ 250A
Drive Voltage: 4.5V (Max Rds(on)), 10V (Min Rds(on))
Quality and Safety Features
RoHS3 compliant
150°C Maximum Junction Temperature (Tj)
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Battery chargers
Telecommunication equipment
Industrial automation and control
Product Lifecycle
Current active product
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent efficiency and power density performance
Low on-resistance for reduced power losses
Compact 8-SOIC package for space-constrained designs
Suitable for a wide range of power conversion applications
Reliable and RoHS3 compliant