Manufacturer Part Number
STS5P3LLH6
Manufacturer
STMicroelectronics
Introduction
P-channel power MOSFET in 8-SOIC (0.154", 3.90mm Width) package
Product Features and Performance
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 56mΩ @ 2.5A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 639pF @ 25V
Power Dissipation: 2.7W @ 25°C
Product Advantages
DeepGATE, STripFET H6 technology for improved performance
Low on-resistance for efficient power conversion
Supports high-frequency switching applications
Key Technical Parameters
MOSFET Technology: P-Channel
Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg): 6nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Surface mount (8-SOIC) package
Application Areas
Power management
Motor control
Switching power supplies
Automotive electronics
Product Lifecycle
This product is actively supported by the manufacturer. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
Suitable for high-frequency switching applications
Reliable and RoHS3 compliant for use in various industries
Available in a standard surface mount package for easy integration
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