STS4DNF60L - STMicroelectronics

Manufacturer Part Number

STS4DNF60L

Manufacturer

STMicroelectronics

Introduction

Dual N-Channel MOSFET transistor array

Part of the STripFET series

Product Features and Performance

60V Drain to Source Voltage (Vdss)

55mOhm Maximum On-Resistance (Rds(on)) @ 2A, 10V

4A Continuous Drain Current (Id) @ 25°C

1030pF Maximum Input Capacitance (Ciss) @ 25V

15nC Maximum Gate Charge (Qg) @ 4.5V

Logic Level Gate (Vgs(th) ≤ 2.5V @ 250μA)

Wide Operating Temperature Range: -55°C to 150°C

Product Advantages

Dual N-Channel design in a compact 8-SOIC package

Low On-Resistance for efficient power switching

Logic Level Gate for easy drive from microcontrollers

Suitable for high-frequency, high-power switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

On-Resistance (Rds(on)): 55mOhm @ 2A, 10V

Continuous Drain Current (Id): 4A @ 25°C

Input Capacitance (Ciss): 1030pF @ 25V

Gate Charge (Qg): 15nC @ 4.5V

Gate Threshold Voltage (Vgs(th)): ≤ 2.5V @ 250μA

Quality and Safety Features

RoHS3 Compliant

Suitable for Tape & Reel (TR) packaging

Compatibility

Can be used in a wide range of power electronic applications, such as:

- Motor drives

- Power supplies

- Switching regulators

- Inverters

- General-purpose power switching

Application Areas

High-frequency, high-power switching applications

Power management systems

Industrial and consumer electronics

Product Lifecycle

Currently in production

No immediate plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Compact dual MOSFET design in 8-SOIC package

Low On-Resistance for efficient power switching

Logic Level Gate for easy microcontroller interfacing

Wide operating temperature range (-55°C to 150°C)

RoHS3 compliance for environmental safety

Suitable for high-frequency, high-power switching applications