STS01DTP06 - STMicroelectronics

Manufacturer Part Number

STS01DTP06

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Arrays

Product Features and Performance

RoHS3 Compliant

8-SOIC Packaging

Operating Temperature: 150°C (TJ)

Power Rating: 2W

Collector-Emitter Breakdown Voltage (Max): 30V

Collector Current (Max): 3A

Collector Cutoff Current (Max): 1A

Collector-Emitter Saturation Voltage (Max): 700mV @ 100mA, 2A

Transistor Type: NPN, PNP

DC Current Gain (hFE) (Min): 100 @ 1A, 2V

Surface Mount Mounting

Product Advantages

Compact 8-SOIC package

High power and current handling capabilities

Robust thermal performance up to 150°C

Suitable for a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 30V

Current Collector (Ic) (Max): 3A

Current Collector Cutoff (Max): 1A

Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of electronic applications

Application Areas

Suitable for various electronic circuits and systems that require high-performance bipolar transistors

Product Lifecycle

Currently available product

No information on discontinuation or replacement

Several Key Reasons to Choose This Product

Compact 8-SOIC package for space-constrained designs

High power and current handling capabilities

Robust thermal performance up to 150°C

Suitable for a wide range of electronic applications

RoHS3 compliance for environmentally-friendly usage