Manufacturer Part Number
STR1P2UH7
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
STripFET H7 Series
P-Channel MOSFET
Max Drain-Source Voltage: 20V
Max Gate-Source Voltage: ±8V
Max Drain Current: 1.4A
On-State Resistance: 100mΩ @ 700mA, 4.5V
Input Capacitance: 510pF @ 10V
Max Power Dissipation: 350mW
Threshold Voltage: 1V @ 250μA
Drive Voltage Range: 1.8V to 4.5V
Gate Charge: 4.8nC @ 4.5V
Product Advantages
Compact SOT-23-3 surface mount package
Low on-state resistance for efficient power switching
Wide operating temperature range up to 150°C
Key Technical Parameters
Voltage, Current, Resistance, Capacitance, Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of power switching applications
Application Areas
Power management
Switching circuits
Battery-powered devices
Product Lifecycle
Current production, no plans for discontinuation
Replacement/upgrade options available
Key Reasons to Choose
Compact size, low on-resistance, and high temperature operation
Suitable for efficient power switching in diverse electronic applications
RoHS compliance for environmentally-friendly design