Manufacturer Part Number
STP9NM60N
Manufacturer
STMicroelectronics
Introduction
The STP9NM60N is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.
Product Features and Performance
RoHS3 Compliant
TO-220 Package
600V Drain to Source Voltage
±25V Gate to Source Voltage
745mOhm Drain to Source On-Resistance
5A Continuous Drain Current
452pF Input Capacitance
70W Power Dissipation
N-Channel MOSFET
4V Gate Threshold Voltage
10V Drive Voltage
4nC Gate Charge
Product Advantages
High voltage capability
Low on-resistance
High current handling
Compact TO-220 package
Key Technical Parameters
Drain to Source Voltage: 600V
Gate to Source Voltage: ±25V
Drain to Source On-Resistance: 745mOhm
Continuous Drain Current: 6.5A
Input Capacitance: 452pF
Power Dissipation: 70W
Gate Threshold Voltage: 4V
Gate Charge: 17.4nC
Quality and Safety Features
RoHS3 Compliant
Through Hole Mounting
Compatibility
Compatible with MDmesh II Series
Application Areas
Suitable for power conversion, motor control, and other high-voltage, high-current applications
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Compact TO-220 package for easy integration
Compatibility with the MDmesh II Series
Suitable for a wide range of power electronics applications