Manufacturer Part Number
STP9NK65Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Drain-to-Source Voltage (Vdss): 650V
Continuous Drain Current (Id) @ 25°C: 6.4A
On-State Resistance (Rds(on)) @ Id, Vgs: 1.2Ω @ 3.2A, 10V
Input Capacitance (Ciss) @ Vds: 1145pF @ 25V
Power Dissipation (Tc): 125W
Gate Charge (Qg) @ Vgs: 41nC @ 10V
Product Advantages
High voltage rating
Low on-state resistance
High continuous drain current
Suitable for high-power switching applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)) @ Id: 4.5V @ 100A
Drive Voltage (Max Rds(on), Min Rds(on)): 10V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: TO-220
Compatibility
Package: TO-220-3
Supplier Device Package: TO-220
Application Areas
High-power switching applications
Power supplies
Motor drives
Inverters
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage rating for reliable operation in high-voltage applications
Low on-state resistance for efficient power handling
High continuous drain current capability
Suitable for a wide range of high-power switching applications
Proven reliability and quality from a reputable manufacturer
STP9NK50Z MOSSTMicroelectronics
STP9NK80ZFPSTCHN