Manufacturer Part Number
STP8NM50N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25 V
Rds On (Max) @ Id, Vgs: 790 mOhm @ 2.5 A, 10 V
Current Continuous Drain (Id) @ 25°C: 5 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
Power Dissipation (Max): 45 W (Tc)
Vgs(th) (Max) @ Id: 4 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Product Advantages
High voltage and power handling capability
Low on-resistance for efficient power conversion
Suitable for various power management and control applications
Key Technical Parameters
MOSFET Technology
TO-220 Package
Operating Temperature: 150°C (TJ)
RoHS3 Compliant
Quality and Safety Features
Reliable and durable design
Compliant with RoHS environmental regulations
Compatibility
Suitable for various power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Mature product
Replacement and upgrade options available
Key Reasons to Choose
High voltage and power handling
Low on-resistance for efficiency
Reliable and durable design
Suitable for diverse power electronics applications
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