Manufacturer Part Number
STP8NK100Z
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
Drain-to-source voltage up to 1000V
Continuous drain current up to 6.5A at 25°C
On-state resistance as low as 1.85Ω
Input capacitance of 2180pF
Power dissipation up to 160W
Product Advantages
Superior switching performance
High voltage and current handling capabilities
Low on-state resistance
Compact TO-220 package
Key Technical Parameters
Drain-to-source voltage (Vdss): 1000V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 1.85Ω @ 3.15A, 10V
Threshold voltage (Vgs(th)): 4.5V @ 100A
Input capacitance (Ciss): 2180pF @ 25V
Power dissipation (Pd): 160W
Quality and Safety Features
RoHS3 compliant
Suitable for high-power, high-voltage applications
Compatibility
Suitable for use in various power electronics and industrial applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Lighting control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options are available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power conversion
Compact and robust TO-220 package
Proven reliability and performance in various high-power applications
STP8NA80ZFPSTMRC
STP8NK80ZFPSTMicroelectronicsMOSFET N-CH 800V 6.2A TO220FP