Manufacturer Part Number
STP7NK80Z
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET in a TO-220 package
Product Features and Performance
800V drain-source voltage
2A continuous drain current at 25°C
Low on-resistance of 1.8Ω
High input capacitance of 1138pF
Maximum power dissipation of 125W
Product Advantages
Reliable and robust design
Suitable for high-voltage, high-power applications
Efficient heat dissipation with TO-220 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.8Ω
Continuous Drain Current (Id): 5.2A
Input Capacitance (Ciss): 1138pF
Power Dissipation (Pc): 125W
Quality and Safety Features
RoHS3 compliant
Suitable for operation in -55°C to 150°C temperature range
Compatibility
Compatible with TO-220-3 package
Suitable for applications using N-channel MOSFETs
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Robust and reliable design for demanding applications
Compact and efficient TO-220 package
Wide operating temperature range