Manufacturer Part Number
STP5NB60
Manufacturer
STMicroelectronics
Introduction
Power MOSFET transistor
Product Features and Performance
600V drain-source voltage
5A continuous drain current
2Ω maximum on-resistance
100W power dissipation
884pF maximum input capacitance
150°C maximum junction temperature
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
N-channel MOSFET
600V drain-source voltage
5V maximum gate-source threshold voltage
10V maximum gate-source voltage
100W maximum power dissipation
Quality and Safety Features
RoHS non-compliant
Through-hole TO-220 package
Compatibility
Replacement and upgrade options may be available
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial controls
Home appliances
Product Lifecycle
Active and available product
Replacement or upgrade options may be considered for newer designs
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Established STMicroelectronics quality and reliability