Manufacturer Part Number
STP4NK60Z
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET
Part of the SuperMESH series
Product Features and Performance
Drain-to-Source Voltage (Vdss): 600 V
Gate-to-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 2 Ω @ 2 A, 10 V
Continuous Drain Current (Id): 4 A @ 25°C (Tc)
Input Capacitance (Ciss): 510 pF @ 25 V
Power Dissipation (Ptot): 70 W @ 25°C (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Product Advantages
High voltage capability
Low on-state resistance
High power handling
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 4.5 V @ 50 A
Gate Charge (Qg): 26 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
Reliable through-hole mounting
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Lighting ballasts
Product Lifecycle
Currently in production
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage and power handling capabilities
Low on-state resistance for efficient performance
Reliable through-hole packaging
Suitable for a wide range of power electronics applications
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