Manufacturer Part Number
STP43N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with high voltage rating and low on-resistance
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 93mΩ at 17A, 10V
High continuous drain current of 34A at 25°C
Fast switching with low gate charge of 56nC at 10V
Wide operating temperature range of -55°C to 150°C
Suitable for high-power and high-frequency applications
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable performance under high voltage and current conditions
Versatile application in various power electronics circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 93mΩ @ 17A, 10V
Continuous Drain Current (Id): 34A @ 25°C
Input Capacitance (Ciss): 2500pF @ 100V
Power Dissipation (Pd): 250W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package with high thermal performance
Compatibility
Suitable for various power conversion and control applications, such as switching power supplies, motor drives, and inverters
Application Areas
High-power and high-frequency electronic systems
Industrial, automotive, and consumer electronics applications
Product Lifecycle
Currently available, no discontinuation or replacement plans announced
Key Reasons to Choose This Product
Excellent power efficiency and high voltage capability
Reliable and robust performance under harsh conditions
Versatile and suitable for a wide range of power electronics applications
Proven quality and safety compliance with RoHS3 standard
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