Manufacturer Part Number
STP3N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel enhancement mode MOSFET in TO-220 package
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High breakdown voltage of 800V
Low on-resistance of 3.5Ω @ 1A, 10V
High continuous drain current of 2.5A at 25°C
Low input capacitance of 130pF @ 100V
Power dissipation up to 60W at Tc
Product Advantages
Excellent switching characteristics
Robust design for harsh environments
Efficient power conversion
Reliable and long-lasting performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.5Ω @ 1A, 10V
Continuous Drain Current (Id): 2.5A @ 25°C
Input Capacitance (Ciss): 130pF @ 100V
Power Dissipation (Pd): 60W @ Tc
Quality and Safety Features
RoHS3 compliant
Tested for reliability and safety
Compatibility
Through-hole mounting in TO-220 package
Application Areas
Switched-mode power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust design for harsh environments
Reliable and long-lasting operation
Broad range of applications
Readily available and well-supported
STP3N100 P3N100STMicroelectronics
STP3NA60FIVBSEMI