Manufacturer Part Number
STP38N65M5
Manufacturer
STMicroelectronics
Introduction
The STP38N65M5 is a high-performance N-channel MOSFET transistor designed for use in various power electronics applications.
Product Features and Performance
650V drain-to-source voltage rating
95mΩ maximum on-resistance at 15A, 10V
30A continuous drain current at 25°C
190W maximum power dissipation at Tc
150°C maximum junction temperature
Low input capacitance of 3000pF at 100V
Fast switching characteristics
Product Advantages
Efficient power conversion and control
Suitable for high-voltage, high-current applications
Robust and reliable performance
Optimized for low power losses and high efficiency
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 95mΩ @ 15A, 10V
Drain Current (Id): 30A (Tc)
Power Dissipation (Pd): 190W (Tc)
Junction Temperature (Tj): 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Robust and reliable construction
Compatibility
Compatible with various power electronics applications
Suitable for use in industrial, automotive, and consumer electronics
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Lighting ballasts
Product Lifecycle
This product is currently in production and is not near discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
High-voltage and high-current capability
Low on-resistance for efficient power conversion
Robust and reliable performance in harsh environments
Optimized for low power losses and high efficiency
Compatibility with a wide range of power electronics applications
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