STP38N65M5 - STMicroelectronics

Manufacturer Part Number

STP38N65M5

Manufacturer

STMicroelectronics

Introduction

The STP38N65M5 is a high-performance N-channel MOSFET transistor designed for use in various power electronics applications.

Product Features and Performance

650V drain-to-source voltage rating

95mΩ maximum on-resistance at 15A, 10V

30A continuous drain current at 25°C

190W maximum power dissipation at Tc

150°C maximum junction temperature

Low input capacitance of 3000pF at 100V

Fast switching characteristics

Product Advantages

Efficient power conversion and control

Suitable for high-voltage, high-current applications

Robust and reliable performance

Optimized for low power losses and high efficiency

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 650V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 95mΩ @ 15A, 10V

Drain Current (Id): 30A (Tc)

Power Dissipation (Pd): 190W (Tc)

Junction Temperature (Tj): 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments

Robust and reliable construction

Compatibility

Compatible with various power electronics applications

Suitable for use in industrial, automotive, and consumer electronics

Application Areas

Switch-mode power supplies

Motor drives

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating

Lighting ballasts

Product Lifecycle

This product is currently in production and is not near discontinuation.

Replacement or upgrade options may be available from STMicroelectronics.

Key Reasons to Choose This Product

High-voltage and high-current capability

Low on-resistance for efficient power conversion

Robust and reliable performance in harsh environments

Optimized for low power losses and high efficiency

Compatibility with a wide range of power electronics applications