Manufacturer Part Number
STP34NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
600V drain-to-source voltage
150°C maximum junction temperature
29A continuous drain current at 25°C case temperature
110mΩ maximum on-resistance at 14.5A, 10V
2785pF maximum input capacitance at 50V
190W maximum power dissipation at 25°C case temperature
Product Advantages
Fast switching speed
Low on-resistance
High power handling capability
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 110mΩ @ 14.5A, 10V
Continuous drain current (Id): 29A @ 25°C
Input capacitance (Ciss): 2785pF @ 50V
Power dissipation (Pd): 190W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220 package for through-hole mounting
Compatibility
Compatible with a wide range of high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose
High voltage and current handling capability
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Robust design and high power dissipation capability
Widely compatible with various high-power electronics
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