Manufacturer Part Number
STP22NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-220 package
Suitable for a wide range of power conversion and control applications
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 220mΩ
Continuous drain current of 16A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching performance
Low gate charge of 44nC
Product Advantages
Excellent power conversion efficiency
Reliable and rugged design
Compact and easy to integrate
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 220mΩ @ 8A, 10V
Drain Current (Id): 16A @ 25°C
Input Capacitance (Ciss): 1300pF @ 50V
Power Dissipation (Ptot): 125W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in TO-220 package
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent performance and efficiency for power conversion applications
Reliable and rugged design for industrial and consumer use
Wide operating temperature range and high breakdown voltage
Easy to integrate into existing designs due to standard TO-220 package
STP22NE10LSTMicroelectronics