Manufacturer Part Number
STP20N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in a TO-220 package
Designed for high-power, high-voltage switching applications
Product Features and Performance
650V Drain-to-Source Voltage
190mΩ On-State Resistance
18A Continuous Drain Current
Wide Operating Temperature Range: -55°C to 150°C
Low Gate Charge: 45nC
Fast Switching Characteristics
Product Advantages
Excellent Power Handling Capability
High Reliability and Ruggedness
Optimized for Efficiency in High-Power Applications
Compact and Space-Saving TO-220 Package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 190mΩ
Continuous Drain Current (Id): 18A
Input Capacitance (Ciss): 1345pF
Power Dissipation (Tc): 130W
Quality and Safety Features
RoHS3 Compliant
Designed and Manufactured to High Quality Standards
Compatibility
Suitable for a Wide Range of High-Power, High-Voltage Switching Applications
Application Areas
Switch-Mode Power Supplies
Motor Drives
Inverters
Welding Equipment
Industrial Electronics
Product Lifecycle
Currently in Active Production
No Immediate Discontinuation Plans
Replacement or Upgrade Options Available from STMicroelectronics
Several Key Reasons to Choose This Product
Excellent Power Handling Capability
High Reliability and Ruggedness
Optimized for Efficiency in High-Power Applications
Wide Operating Temperature Range
Compact and Space-Saving TO-220 Package
RoHS3 Compliant and Designed to High Quality Standards
STP20NF20 MOSSTMicroelectronics
STP204A