Manufacturer Part Number
STP16N65M5
Manufacturer
STMicroelectronics
Introduction
This product is a high-performance N-channel MOSFET transistor with a maximum drain-source voltage of 650V and a continuous drain current of 12A.
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance of 299mOhm
High current capability of 12A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1250pF
High power dissipation of 90W
Product Advantages
Excellent power handling capabilities
Robust and reliable performance
Suitable for high-voltage and high-current applications
Efficient and energy-saving design
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 299mOhm
Continuous Drain Current (Id): 12A
Input Capacitance (Ciss): 1250pF
Power Dissipation (Tc): 90W
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Stable and reliable operation within the specified temperature range
Compatibility
This MOSFET is compatible with various high-voltage and high-current applications, such as power supplies, motor drives, and industrial controls.
Application Areas
Power conversion and control
Motor drives
Switched-mode power supplies
Industrial and automotive electronics
Product Lifecycle
This MOSFET is an active and widely used product in the industry. Replacement or upgrade options are available from the manufacturer and other sources.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance
Suitable for a wide range of high-voltage and high-current applications
Cost-effective and readily available solution
Backed by the quality and expertise of STMicroelectronics