Manufacturer Part Number
STN1NF10
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
100V drain-to-source voltage
800mΩ maximum on-resistance
1A continuous drain current at 25°C
105pF maximum input capacitance
6nC maximum gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion with low on-resistance
Reliable performance in high-voltage applications
Compact surface-mount package for space-constrained designs
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 800mΩ @ 500mA, 10V
Continuous drain current (Id): 1A @ 25°C
Input capacitance (Ciss): 105pF @ 25V
Power dissipation (Ptot): 2.5W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with TO-261-4, TO-261AA packages
Tape and reel packaging for automated assembly
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
Currently available
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose
Excellent efficiency and performance with low on-resistance
Reliable high-voltage operation
Compact surface-mount package for space-saving designs
Wide operating temperature range for diverse applications
RoHS3 compliance for environmentally-conscious designs
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