Manufacturer Part Number
STL9N60M2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
High Voltage MOSFET
Low On-Resistance
Fast Switching Speed
Optimized for High Frequency Applications
Product Advantages
Improved Efficiency
Reduced Power Losses
Reliable Performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 860mΩ @ 2.4A, 10V
Continuous Drain Current (Id): 4.8A @ 25°C
Input Capacitance (Ciss): 320pF @ 100V
Power Dissipation (Tc): 48W
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Compatible with PowerFlat (5x6) HV Package
Can be used in 8-PowerVDFN Package
Application Areas
Switching Power Supplies
Inverters
Motor Drives
Industrial Electronics
Product Lifecycle
Currently in Production
Availability of Replacements and Upgrades
Key Reasons to Choose
Excellent Efficiency and Reliability
High Voltage Operation
Low On-Resistance for Reduced Power Losses
Optimized for High Frequency Switching
Robust Design and AEC-Q101 Qualification