Manufacturer Part Number
STL7N10F7
Manufacturer
STMicroelectronics
Introduction
This is a high-performance N-channel MOSFET transistor from STMicroelectronics' DeepGATE and STripFET VII series.
Product Features and Performance
100V drain-source voltage (Vdss)
±20V gate-source voltage (Vgs)
35mΩ maximum on-resistance (Rds(on)) at 3.5A, 10V
7A continuous drain current (Id) at 25°C
920pF maximum input capacitance (Ciss) at 50V
9W maximum power dissipation at Ta, 50W at Tc
-55°C to 150°C operating temperature range
Product Advantages
High power density and efficiency
Low on-resistance for improved energy savings
Wide operating temperature range
Key Technical Parameters
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
N-Channel type
5V maximum gate threshold voltage (Vgs(th)) at 250μA
10V maximum drive voltage for Rds(on) range
14nC maximum gate charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
PowerFlat (3.3x3.3) package
Compatibility
This MOSFET is compatible with various electronic circuits and power supply applications.
Application Areas
Power management circuits
Motor drives
Power inverters and converters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
High power density and efficiency for improved energy savings
Wide operating temperature range for versatile applications
Low on-resistance for better performance and reliability
Robust and compact PowerFlat package for space-constrained designs
Compatibility with various electronic circuits and power supply applications