Manufacturer Part Number
STL57N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in PowerFlat (8x8) package
Product Features and Performance
650V drain-to-source voltage rating
Low on-resistance of 69mΩ
High continuous drain current of 4.3A (Ta) and 22.5A (Tc)
Low input capacitance of 4200pF
High power dissipation of 2.8W (Ta) and 189W (Tc)
Fast switching with low gate charge of 110nC
Product Advantages
Excellent high-voltage performance
Highly efficient power conversion
Compact and thermally efficient package
Robust and reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 69mΩ
Continuous Drain Current (Id): 4.3A (Ta), 22.5A (Tc)
Input Capacitance (Ciss): 4200pF
Power Dissipation: 2.8W (Ta), 189W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerFlat 8x8 HV)
Compatible with standard MOSFET drivers and control circuits
Application Areas
Switched-mode power supplies
Motor drives
Inductive heating
Industrial and home appliances
Lighting and LED drivers
Product Lifecycle
Current production model
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent high-voltage performance and efficiency
Compact and thermally efficient package
Robust and reliable operation
Compatibility with standard MOSFET driver and control circuits
Suitable for a wide range of power conversion applications
