Manufacturer Part Number
STL21N65M5
Manufacturer
STMicroelectronics
Introduction
High-voltage power MOSFET transistor
Part of the MDmesh V series
Product Features and Performance
650V drain-to-source voltage (Vdss)
179mΩ maximum on-resistance (Rds(on))
17A continuous drain current (Id) at 25°C
1950pF maximum input capacitance (Ciss) at 100V
3W power dissipation at 25°C, 125W at 100°C
N-channel MOSFET
5V maximum gate threshold voltage (Vgs(th))
50nC maximum gate charge (Qg) at 10V
Product Advantages
High voltage, low on-resistance performance
Efficient power management
Compact PowerFlat (8x8) HV package
Key Technical Parameters
Vdss: 650V
Vgs(max): ±25V
Rds(on): 179mΩ
Id (continuous): 17A at 25°C
Ciss: 1950pF at 100V
Power dissipation: 3W at 25°C, 125W at 100°C
Quality and Safety Features
RoHS3 compliant
High-reliability MOSFET design
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Current production, no known plans for discontinuation
Replacement or upgrade parts available if needed
Key Reasons to Choose This Product
Excellent high-voltage, low on-resistance performance
Efficient power handling in a compact package
Reliable and safe operation
Versatile application in various power electronics systems
STL18N65M5STMicroelectronicsMOSFET N-CH 650V 15A POWERFLAT