Manufacturer Part Number
STL18N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel PowerMOS transistor
Product Features and Performance
600V MOSFET with low on-resistance
Fast switching speed
High power density
Robust and reliable design
Suitable for high-power switching applications
Product Advantages
Excellent thermal performance
High voltage capability
Low gate charge for efficient switching
Reduced power losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 308mΩ @ 4.5A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 791pF @ 100V
Power Dissipation: 57W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various high-power switching circuits
Application Areas
Switched-mode power supplies
Motor drives
Induction heating
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
High voltage capability
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency operation
Robust and reliable design for long-term usage
Excellent thermal performance for high-power applications
Compatibility with various high-power switching circuits
