Manufacturer Part Number
STL13N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage N-Channel MDmesh II Plus power MOSFET
Product Features and Performance
600V drain-source voltage
Low on-resistance (420mΩ)
High continuous drain current (7A at 25°C)
Low input capacitance (580pF)
High power dissipation (55W)
Fast switching speed
Product Advantages
Improved efficiency through low switching and conduction losses
Compact and space-saving design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 420mΩ
Continuous drain current (Id): 7A
Input capacitance (Ciss): 580pF
Power dissipation (Ptot): 55W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Surface mount package (PowerFlat 5x6 HV)
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Appliances
Telecom equipment
Product Lifecycle
Currently available
No known plans for discontinuation
Several Key Reasons to Choose This Product
High efficiency and low losses due to low on-resistance and fast switching
Compact and space-saving design
Suitable for a wide range of high-voltage, high-power applications
Reliable and robust design
RoHS3 compliance for environmental compatibility
STL12N60M2 MOSSTMicroelectronics
STL128DNSTMicroelectronicsTRANS NPN 400V 4A TO220