Manufacturer Part Number
STI4N62K3
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel MOSFET in I2PAK package
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage up to 620V
Low on-resistance of 2Ω at 1.9A and 10V
Continuous drain current up to 3.8A at 25°C
Input capacitance of 550pF at 50V
Power dissipation up to 70W
Product Advantages
Excellent power efficiency
Robust and reliable performance
Suitable for high-voltage applications
Key Technical Parameters
Vdss: 620V
Vgs (Max): ±30V
Rds (On) (Max): 2Ω @ 1.9A, 10V
Id (Continuous): 3.8A @ 25°C
Ciss (Max): 550pF @ 50V
Power Dissipation (Max): 70W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power electronic applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is an active and well-supported part of the STMicroelectronics portfolio.
Replacements and upgrades are readily available.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for harsh environments
Wide operating temperature range
Compatibility with a variety of high-voltage applications
Availability of replacement and upgrade options
STI4200S28SIGMATEL