Manufacturer Part Number
STH310N10F7-6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel enhancement-mode power MOSFET in a TO-263-7 (DPak) package designed for high-current, high-voltage applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
5mΩ Maximum On-Resistance (Rds(on))
180A Continuous Drain Current (Id) at 25°C
315W Maximum Power Dissipation at 25°C
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent on-state and switching performance
Robust design for high-current, high-voltage applications
Small, thermally-efficient TO-263-7 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Input Capacitance (Ciss): 12800pF
Gate Charge (Qg): 180nC
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Can be used as a replacement or upgrade for similar power MOSFET devices
Application Areas
High-current, high-voltage applications such as power supplies, motor drives, and industrial equipment
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
Excellent on-state and switching performance for high-current, high-voltage applications
Robust design in a compact, thermally-efficient package
Wide operating temperature range of -55°C to 175°C
RoHS3 compliance and AEC-Q101 qualification for quality and safety